- + 2.2 0.2 3.7 0.35 22.3 0.3 r 1 . 9 t y p . ac 7.9 0.2 2.4 0.2 1.2 0.15 5.0 0.3 1.9 0.3 3.8 0.2 18.7 0.2 18.3 0.5 0.5 0.15 2.5 0.2 4 45 features ideal for printed circuit board reliable low cost construction utilizing molded plas tic technique plastic materrial has u/l flammability classification 94v-o maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. g b u 25d gbu 25g gbu 25j gbu 25k gbu 25m units maximum recurrent peak reverse voltage v rrm 200 400 600 800 1000 v max imum rms v oltage v rms 140 280 420 560 700 v maximum dc blocking voltage v dc 200 400 600 800 10 0 0 v maximum average forw ard tc=100 o u t pu t c u rr en t peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load maximum instantaneous forw ard voltage at 12.5 a v f v maximum reverse current @t a =25 a at rated dc blocking voltage @t a =125 ma typical junction capacitance per leg (note 3) c j pf typical thermal resistance per leg (note 2) r ja (note 1) r jc operating junction temperature range t j storage temperature range t stg 2. units mounted in f ree air, no heat sink on p.c.b., 0.5x0.5"(12x12mm) copper pads, 0.375"(9.5mm) lead length. gbu25a --- GBU25M 3. measured at 1.0 mhz and applied rev erse v oltage of 4.0 v olts. gbu 25a gbu 25b 50 100 1.0 500.0 3 4 0 i fsm a 5.0 mounting position: any i f(av) 25.0 silicon bridge rect ifiers a 100 70 voltage range: 50 --- 1000 v current: 25.0 a 35 5 0 g b u note: 1. unit case mounted on 3.2x3.2x0.12" thick (6.2x8.2x0.3cm) ai. plate. - 55 ---- + 150 - 55 ---- + 150 i r 2.2 /w 211 94 21.0 dimensions in millimeters diode semiconductor korea www.diode.kr
.1 1 100 10 10 1 1 0 0 . 0 1 .1 .8 1 1 .2 1 .4 1 .6 1 1 0 1 0 0 t j =25 pulse width =300us .4 .6 1 0 00 .1 10 04060 20 100 80 t j =25 0.1 1.0 .01 t j =150 100 500 t j =125 50-400v 600-1000v 0 5 0100 20 150 50 15 10 25 30 35 40 0 21 0 100 2 8 0 10 t j =t j max. single sine-wave (jedec method) 1 7 0 1 4 0 3 5 0 t, heating time, sec. fi g. 6 -- typi cal transi ent thermal impedance /w instantaneous reverse current, micro amperes percent of rated peak reverse voltage transient thermal impedance, fi g. 2 -- typi cal forward characteristi c gbu25a --- GBU25M fi g. 1 -- derati ng curve for output rectified current amperes fi g. 4 -- typi cal reverse characteristi c instantaneous forward voltage, volts instantaneous forward current, average forward current, amperes temperature, durge current junction capacitance, pf reverse voltage, volts fi g. 5 -- typical juncti on capaci tance per leg fi g. 3 -- maximum non-repetitive peak forward peak forward surge current, amperes number of cycles at 60hz 1 100 10 10 1000 100 .1 f=1.0 mhz vsig=50mvp-p 50-400v 600-1000v 200 t j =25 4 www.diode.kr diode semiconductor korea
|
